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Suche neuen DDR3 für älteres Board
- Ersteller Fear84
- Erstellt am
CHKL2011
Captain
- Registriert
- Feb. 2011
- Beiträge
- 3.301
Fear84 schrieb:Also erst einmal Danke für die viele Hilfe.
Ich habe schon angeschnitten das dies mein alter Rechner ist, ich Spiele derzeit auf einem zwei Monate alten Alienware System.
...sollte G.Skill auch laufen dafür werde ich mich denke für diesen entscheiden da mir der Preis mehr als zu sagt
Preislich OK -> Timings niedrig -> OK.
Immer die (mehr Infos) anklicken und Daten beachten!
Falls RAM Probleme sind, einfach melden.
Hallo zusammen,
Ich habe mir/ihr jetzt den neuen Ram gekauft http://www.amazon.de/gp/product/B00...&pf_rd_t=101&pf_rd_p=463375173&pf_rd_i=301128
Habe ihn Unlinked auch auf 1600 stehen wie den alten RAM, läuft bis jetzt ohne Probleme laut Memtest.
Er stellt mir aber die Timings so wie er sie will, bringt es was wenn ich die Timings Manuell umstelle auf 9-9-9-24 1T weil er sie Automatisch vom System immer auf 9-11-11-29 2T stellt.
Gruß
Ich habe mir/ihr jetzt den neuen Ram gekauft http://www.amazon.de/gp/product/B00...&pf_rd_t=101&pf_rd_p=463375173&pf_rd_i=301128
Habe ihn Unlinked auch auf 1600 stehen wie den alten RAM, läuft bis jetzt ohne Probleme laut Memtest.
Er stellt mir aber die Timings so wie er sie will, bringt es was wenn ich die Timings Manuell umstelle auf 9-9-9-24 1T weil er sie Automatisch vom System immer auf 9-11-11-29 2T stellt.
Gruß
Memory --------------------------------------------------------------------
[General information]
Total Memory Size: 8 GBytes
Total Memory Size [MB]: 8192
[Current Performance Settings]
Current Memory Clock: 799.6 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 9.0-11-11-29
Memory Runs At: Dual-Channel
Command Rate: 2T
Read to Write Delay (tRD_WR) Same Rank: 19T
Write to Precharge Delay (tWTP/tWR): 24T
Four Activate Window (tFAW): 32T
Row: 0 - 2048 MB PC3-12800 DDR3 SDRAM Corsair CMX8GX3M4A1600C9 ------------
[General Module Information]
Module Number: 0
Module Size: 2048 MBytes
Memory Type: DDR3 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 800.0 MHz (PC3-12800)
Module Manufacturer: Corsair
Module Part Number: CMX8GX3M4A1600C9
Module Revision: 0
Module Serial Number: 0
Module Manufacturing Date: Year: 2000, Week: 0
Module Manufacturing Location: 1
SDRAM Manufacturer: Unknown
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 6, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 533.3 MHz: 8-8-8-20
Supported Module Timing at 400.0 MHz: 6-6-6-15
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 7.500 ns
Minimum Active to Active/Refresh Time (tRCmin): 50.625 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.500 ns
[Features]
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Nominal Height: 30 - 31 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 1.2
[Enthusiast / Certified Profile [Enabled]]
Module VDD Voltage Level: 1.65 V
Memory Controller Voltage Level: 1.15 V
CAS# Latencies Supported: 6, 9
Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin): 11.250 ns
Minimum RAS# to CAS# Delay Time (tRCDmin): 11.250 ns
Minimum Row Precharge Delay Time (tRPmin): 11.250 ns
Minimum Active to Precharge Delay Time (tRASmin): 30.000 ns
Minimum CAS Write Latency Time (tCWLmin): 11.250 ns
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Active to Active/Refresh Delay Time (tRCmin): 50.625 ns
Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin): 160.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.5 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns
Supported Module Timing at 800.0 MHz: 9-9-9-24
Read to Write CMD Turn-around Time Optimization: No adjustment
Write to Read CMD Turn-around Time Optimization: No adjustment
Back 2 Back CMD Turn-around Time Optimization: No adjustment
System Command Rate Mode: 2N
Row: 1 - 2048 MB PC3-12800 DDR3 SDRAM Corsair CMX8GX3M4A1600C9 ------------
[General Module Information]
Module Number: 1
Module Size: 2048 MBytes
Memory Type: DDR3 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 800.0 MHz (PC3-12800)
Module Manufacturer: Corsair
Module Part Number: CMX8GX3M4A1600C9
Module Revision: 0
Module Serial Number: 0
Module Manufacturing Date: Year: 2000, Week: 0
Module Manufacturing Location: 1
SDRAM Manufacturer: Unknown
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 6, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 533.3 MHz: 8-8-8-20
Supported Module Timing at 400.0 MHz: 6-6-6-15
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 7.500 ns
Minimum Active to Active/Refresh Time (tRCmin): 50.625 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.500 ns
[Features]
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Nominal Height: 30 - 31 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 1.2
[Enthusiast / Certified Profile [Enabled]]
Module VDD Voltage Level: 1.65 V
Memory Controller Voltage Level: 1.15 V
CAS# Latencies Supported: 6, 9
Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin): 11.250 ns
Minimum RAS# to CAS# Delay Time (tRCDmin): 11.250 ns
Minimum Row Precharge Delay Time (tRPmin): 11.250 ns
Minimum Active to Precharge Delay Time (tRASmin): 30.000 ns
Minimum CAS Write Latency Time (tCWLmin): 11.250 ns
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Active to Active/Refresh Delay Time (tRCmin): 50.625 ns
Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin): 160.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.5 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns
Supported Module Timing at 800.0 MHz: 9-9-9-24
Read to Write CMD Turn-around Time Optimization: No adjustment
Write to Read CMD Turn-around Time Optimization: No adjustment
Back 2 Back CMD Turn-around Time Optimization: No adjustment
System Command Rate Mode: 2N
Row: 2 - 2048 MB PC3-12800 DDR3 SDRAM Corsair CMX8GX3M4A1600C9 ------------
[General Module Information]
Module Number: 2
Module Size: 2048 MBytes
Memory Type: DDR3 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 800.0 MHz (PC3-12800)
Module Manufacturer: Corsair
Module Part Number: CMX8GX3M4A1600C9
Module Revision: 0
Module Serial Number: 0
Module Manufacturing Date: Year: 2000, Week: 0
Module Manufacturing Location: 1
SDRAM Manufacturer: Unknown
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 6, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 533.3 MHz: 8-8-8-20
Supported Module Timing at 400.0 MHz: 6-6-6-15
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 7.500 ns
Minimum Active to Active/Refresh Time (tRCmin): 50.625 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.500 ns
[Features]
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Nominal Height: 30 - 31 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 1.2
[Enthusiast / Certified Profile [Enabled]]
Module VDD Voltage Level: 1.65 V
Memory Controller Voltage Level: 1.15 V
CAS# Latencies Supported: 6, 9
Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin): 11.250 ns
Minimum RAS# to CAS# Delay Time (tRCDmin): 11.250 ns
Minimum Row Precharge Delay Time (tRPmin): 11.250 ns
Minimum Active to Precharge Delay Time (tRASmin): 30.000 ns
Minimum CAS Write Latency Time (tCWLmin): 11.250 ns
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Active to Active/Refresh Delay Time (tRCmin): 50.625 ns
Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin): 160.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.5 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns
Supported Module Timing at 800.0 MHz: 9-9-9-24
Read to Write CMD Turn-around Time Optimization: No adjustment
Write to Read CMD Turn-around Time Optimization: No adjustment
Back 2 Back CMD Turn-around Time Optimization: No adjustment
System Command Rate Mode: 2N
Row: 3 - 2048 MB PC3-12800 DDR3 SDRAM Corsair CMX8GX3M4A1600C9 ------------
[General Module Information]
Module Number: 3
Module Size: 2048 MBytes
Memory Type: DDR3 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 800.0 MHz (PC3-12800)
Module Manufacturer: Corsair
Module Part Number: CMX8GX3M4A1600C9
Module Revision: 0
Module Serial Number: 0
Module Manufacturing Date: Year: 2000, Week: 0
Module Manufacturing Location: 1
SDRAM Manufacturer: Unknown
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 6, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 533.3 MHz: 8-8-8-20
Supported Module Timing at 400.0 MHz: 6-6-6-15
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 7.500 ns
Minimum Active to Active/Refresh Time (tRCmin): 50.625 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.500 ns
[Features]
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Nominal Height: 30 - 31 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 1.2
[Enthusiast / Certified Profile [Enabled]]
Module VDD Voltage Level: 1.65 V
Memory Controller Voltage Level: 1.15 V
CAS# Latencies Supported: 6, 9
Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin): 11.250 ns
Minimum RAS# to CAS# Delay Time (tRCDmin): 11.250 ns
Minimum Row Precharge Delay Time (tRPmin): 11.250 ns
Minimum Active to Precharge Delay Time (tRASmin): 30.000 ns
Minimum CAS Write Latency Time (tCWLmin): 11.250 ns
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Active to Active/Refresh Delay Time (tRCmin): 50.625 ns
Maximum tREFI Time (Average Periodic Refresh Interval): 7.750 us
Minimum Refresh Recovery Delay Time (tRFCmin): 160.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 37.5 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns
Supported Module Timing at 800.0 MHz: 9-9-9-24
Read to Write CMD Turn-around Time Optimization: No adjustment
Write to Read CMD Turn-around Time Optimization: No adjustment
Back 2 Back CMD Turn-around Time Optimization: No adjustment
System Command Rate Mode: 2N
CHKL2011
Captain
- Registriert
- Feb. 2011
- Beiträge
- 3.301
Fear84 schrieb:Unlinked auch auf 1600 stehen wie den alten RAM, läuft bis jetzt ohne Probleme laut Memtest.
Das Bios stellt die RAM´s automatisch ein.
Wenn im Bios alle Speichermodule auf 1600MHZ laufen, ist alles OK.
Somit im Bios nichts verändern.
Was sagt Windows ?
firexs
Fleet Admiral
- Registriert
- Nov. 2003
- Beiträge
- 10.341
Also 9-9-9-24 kann gut laufen, aber oftmals ist 1T zu flott für den Speicher, die Kiste wird instabil. 2T ist in den meisten fällen stabil.
Gab in den letzten 2-3jahren viele Threads dazu.
Ansonsten kannst es auch einfach auf den automatischen, sicheren Werten belassen, weil man davon nichts merkt, ausser in Benchmarks.
lg
fire
Gab in den letzten 2-3jahren viele Threads dazu.
Ansonsten kannst es auch einfach auf den automatischen, sicheren Werten belassen, weil man davon nichts merkt, ausser in Benchmarks.
lg
fire
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